Application of BES |CAS：10191-18-1|in Semiconductor

N，N-bis (2-hydroxyethyl) - 2-aminoethanesulfonic acid, abbreviated as BES, CAS 10191-18-1, is an organic compound with molecular formula C6H15NO5S and molecular weight 213.25. BES is a biological buffer, widely used in laboratory research and development and chemical and pharmaceutical synthesis. In addition, BES can also be used in semiconductor. The patent CN103387796B provides a chemical mechanical polishing composition with chemical additives and a method of use thereof. This week, YACOO editor briefly introduces the composition of this chemical mechanical polishing composition.
       The chemical mechanical polishing (CMP) composition includes abrasives, chemical additives, and the rest are essentially liquid carriers and optionally pH buffers, surfactants, and biocides.
        The abrasive can be aluminum oxide, cerium dioxide, germanium oxide, silicon dioxide, aluminum doped silicon dioxide, titanium dioxide, zirconia, and mixtures thereof.
The chemical additives can be piperazine derivatives, substituted 4-morpholine derivatives, substituted sulfamic acid derivatives and their salts（can be TES、TAPS、TABS、ACES、BES、CAPS、CHES）, substituted tertiary amine compounds and their salts, substituted diamine compounds and their salts, and combinations thereof.
        When TES, ACES, or BES additives are added to the polishing composition, the "SiC" film removal rates for TES, ACES, and BES increase to 929 angstroms per minute, 843 angstroms per minute, and 965 angstroms per minute, respectively. When TES is used as an additive, the removal rate increases by 55%, when ACES is used as an additive, the removal rate increases by 41%, and when BES is used as an additive, the removal rate increases by about 61%.

Reference
CN103387796B Chemical mechanical polishing composition with chemical additives and its use method.